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SiS902DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
32
6.4
40
8.1
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 78 °C/W.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
75
81
-5
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1.2
2.5
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 75 V, V GS = 0 V
V DS = 75 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
8
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 3 A
V GS = 4.5 V, I D = 2.7 A
V DS = 15 V, I D = 3 A
0.155
0.190
10
0.186
0.228
Ω
S
Dynamic b
Input Capacitance
C iss
175
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 38 V, V GS = 0 V, f = 1 MHz
30
18
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 38 V, V GS = 10 V, I D = 3 A
V DS = 38 V, V GS = 4.5 V, I D = 3 A
3.9
2.1
0.8
6
3.2
nC
Gate-Drain Charge
Q gd
0.6
Gate Resistance
R g
f = 1 MHz
0.4
2
4
Ω
Turn-On Delay Time
t d(on)
17
26
Rise Time
Turn-Off Delay Time
t r
t d(off)
V DD = 38 V, R L = 16 Ω
I D ? 2.4 A, V GEN = 4.5 V, R g = 1 Ω
18
12
27
20
Fall Time
Turn-On Delay Time
t f
t d(on)
9
5
18
10
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 38 V, R L = 16 Ω
I D ? 2.4 A, V GEN = 10 V, R g = 1 Ω
8
10
6
16
20
10
www.vishay.com
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Document Number: 64804
S09-0661-Rev. A, 20-Apr-09
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